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| 2SK740 Silicon N-Channel MOS FET Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK740 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 150 20 10 40 10 50 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 150 20 -- -- 2.0 -- 4.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.12 7.0 1200 550 85 20 50 70 40 1.2 220 Max -- -- 10 250 4.0 0.15 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 10 A, VGS = 0 I F = 10 A, VGS = 0, diF/dt = 50 A/s I D = 5 A, VGS = 10 V, RL = 6 Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 120 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 5 A, VGS = 10 V *1 I D = 5 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK740 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 100 Maximum Safe Operation Area 10 Drain Current ID (A) 40 10 10 0 s s ) ) ot 5C 2 Sh s m s (1 C = 1 m (T 10 ion t = ra PW pe O C D 20 1.0 Operation in this area is limited by RDS (on) Ta = 25C 0.1 0 50 100 Case Temperature TC (C) 150 1 10 100 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 20 15V 10 V 8V 16 Drain Current ID (A) Pulse Test 6V Drain Current ID (A) 20 Typical Transfer Characteristics -25C 16 V = 10 V DS Pulse Test 12 75C TC = 25C 12 5.5 V 8 5V 4 VGS = 4.5 V 0 4 8 12 16 Drain to Source Voltage VDS (V) 20 8 4 0 2 4 6 8 10 Gate to Source Voltage VGS (V) 3 2SK740 Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Drain to Source Saturation Voltage VDS (on) (V) PulseTest 4 Static Drain to Source on State Resistance RDS (on) () 0.5 VGS = 10 V Static Drain to Source on State Resistance vs. Drain Current 0.2 0.1 3 15 V 0.05 Pulse Test 2 ID = 10 A 1 5A 2A 0 4 8 12 16 Gate to Source Voltage VGS (V) 20 0.02 0.01 0.005 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () VGS = 10 V Pulse Test 0.4 Forward Transfer Admittance yfs (S) 0.5 50 Forward Transfer Admittance vs. Drain Current 20 10 5 VGS = 10 V Pulse Test -25C Ta = 25C 75C 0.3 10 A 0.2 5A 0.1 2A 2 1.0 0.5 0.2 0 -40 0 40 80 120 Case Temperature TC (C) 160 0.5 1.0 2 5 Drain Current ID (A) 10 20 4 2SK740 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 10,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 1,000 Coss 200 100 50 di/dt = 50 A/s VGS = 0 Ta = 25C Pulse Test Capacitance C (pF) 20 10 5 0.5 100 Crss 1.0 2 5 10 20 Reverse Drain Current IDR (A) 50 10 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 200 Drain to Source Voltage VDS (V) 20 Gate to Source Voltage VGS (V) VDD = 100 V 50 V 120 25 V VDS VGS 12 500 Switching Characteristics VGS = 10 V VDD = 30 V PW = 2s, duty < 1 % * * Switching Time t (ns) 160 16 200 100 50 tr td (off) tf td (on) 80 8 20 10 5 0.2 40 VDD = 100 V 50 V 25 V 8 ID = 10 A 4 0 16 24 32 Gate Charge Qg (nc) 0 40 0.5 1.0 2 5 10 Drain Current ID (A) 20 5 2SK740 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 5 V, 10 V 4 VGS = 0, -5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 TC = 25C 1.0 0.05 0.02 tP 1 0.0 Sho 1 0.03 0.01 10 uls e ch-c (t) = S (t) * ch-c ch-c = 2.5C/W, TC = 25C PDM D = PW T PW T 1m 10 m Pulse Width PW (s) 100 m 1 10 100 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vin Vout 50 Vin = 10 V . VDD = 30 V . td (on) 90 % tr 90 % td (off) tf 10 % 10 % 10 % Wavewforms 90 % 6 Unit: mm 11.5 MAX 2.79 0.2 10.16 0.2 9.5 8.0 3.6 -0.08 +0.1 4.44 0.2 1.26 0.15 6.4 +0.2 -0.1 18.5 0.5 15.0 0.3 1.27 2.7 MAX 14.0 0.5 1.5 MAX 7.8 0.5 0.76 0.1 2.54 0.5 2.54 0.5 0.5 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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